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mga-17516 low noise, high linearity match pair low noise amplifier data sheet description avago technologies mga-17516 is an economical, easy-to-use gaas mmic match pair low noise amplifier (lna). the lna has low noise and high linearity achieved through the use of avago technologies proprietary 0.25um gaas enhancement-mode phemt process. it is housed in a miniature 4.0 x 4.0 x 0.85mm 3 16-pin quad- flat-non-lead (qfn) package. the compact footprint and low profile coupled with low noise, high gain and high linearity make the mga-17516 an ideal choice as a low noise amplifier for cellular infrastructure for gsm, cdma and tds-cdma applications. this device is applicable to both single and balance mode. it is designed for optimum use from 1.7ghz to 2.7ghz. for optimum performance at lower frequency from 500mhz to 1.7ghz, the mga-16516 is recommended. both mga-17516 and mga-16516 share the same package and pinout. pin configuration and package marking attention: observe precautions for handling electrostatic sensitive devices. esd machine model = 40 v esd human body model = 350 v refer to avago application note a004r: electrostatic discharge, damage and control. features 4.0 x 4.0 x 0.85 mm 3 16-lead qfn low noise figure high linearity performance gaas e-phemt technology [1] low cost small package size: 4.0x4.0x0.85 mm 3 excellent uniformity in product specifications tape-and-reel packaging option available specifications 1.85ghz; 5v, 50ma (typ) per section 17.4 db gain 0.46 db noise figure 16.2 dbm input ip3 21 dbm output power at 1db gain compression applications low noise amplifier for cellular infrastructure for gsm, cdma and tds-cdma. other ultra low noise application. note: package marking provides orientation and identification 17516 = device code yyww = year and work week xxxx = last 4 digit of device lot number 17516 yyww xxxx pin 1 gnd pin 2 pin 3 pin 4 pin 8 pin 7 pin 6 pin 5 pin 12 pin 11 pin 10 pin 9 pin 13 pin 14 pin 16 pin 16 bottom view top view
2 [1] [4] [3] [2] [9] [5] [12] [11] [10] [13] [8] [7] [6] [16] [15] [14] pin use 1 not used 2 not used 3 not used 4 not used 5 rfin1 6 not used 7 not used 8 rfin2 9 not used 10 not used 11 not used 12 not used 13 rfout2 14 not used 15 not used 16 rfout1 note: enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. simplified schematic l1 l2 ca7 ca5 c1 c2 ca11 ca9 ra1 ra4 rfin a rfout a c3 rfin b l3 rb1 cb5 cb7 c4 rfout b cb9 cb11 rb4 l4 vdd1 vdd2 vgg2 vgg1 [1] [4] [3] [2] [9] [5] [12] [11] [10] [13] [8] [7] [6] [16] [15] [14] pin configuration
3 absolute maximum rating [2] t a = 25c symbol parameter units absolute max. v dd device voltage, rf output to ground v 5.5 v gg gate voltage v 1 p in cw rf input power (v dd = 5.0, i dd = 50ma) dbm 15 i dd device current, rfout to ground per channel ma 100 p diss total power dissipation [4] w1 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance [3] (v dd = 5.0v, i dd = 50ma per channel), jc = 49.4c/w per channel notes: 2. operation of this device in excess of any of these limits may cause permanent damage. 3. thermal resistance measured using infra-red measurement technique with both channels turned on hence i dd_total =100ma. 4. power dissipation with both channels turned on. board temperature t b is 25c. derate at 20mw/c for t b >100c. electrical specifications [7-10] rf performance at t a = 25c, v dd =5v, i dd = 50ma, 1.85 ghz and 1.95 ghz given for each rf channel, measured on demo board in figure 5 with component list in table1 for 1.85ghz matching. symbol parameter and test condition frequency (ghz) units min. typ. max. v gg operational gate voltage, idd=50ma v 0.40 0.53 0.65 gain gain 1.85 db 17.4 1.95 db 15.5 16.8 18.5 iip3 [8] input third order intercept point 1.85 dbm 16.2 1.95 dbm 13.5 17 nf [9] noise figure 1.85 db 0.46 1.95 db 0.50 0.75 op1db output power at 1db gain compression 1.85 dbm 21 1.95 dbm 21 irl input return loss, 50 source 1.85 db 6 1.95 db 6.3 orl output return loss, 50 load 1.85 db 15 1.95 db 15 rev isol reverse isolation 1.85 db 26 1.95 db 26 isol 1-2 isolation between rfin1 and rfin2 1.85 db 38 1.95 db 38 notes: 7. measurements at 1.85 ghz obtained using demo board described in figure 1. 8. iip3 test condition: a. f rf1 = 1.85 ghz, f rf2 = 1.851 ghz with input power of -15dbm per tone. b. f rf1 = 1.95 ghz, f rf2 = 1.951ghz with input power of -15dbm per tone. 9. for nf data, board losses of the input have not been de-embedded. 10. use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. see absolute maximum ratings and application note for more details.
4 product consistency distribution charts figure 1. vgg @ 1.95ghz, 5v, 50ma mean = 0.53 figure 2. noise figure @ 1.95ghz, 5v, 50ma mean = 0.50 figure 3. iip3 @ 1.95ghz, 5v, 50ma mean = 17.0 figure 4. gain @ 1.95ghz, 5v, 50ma mean = 16.8 notes: 1. distribution data samples size is 500 samples taken from 4 different wafers. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. circuit losses have not been de-embedded from actual measurement. mean : 16.8 min : 15.5 max : 18.5 mean : 17.0 min : 13.5 mean : 0.50 max : 0.75 mean : 0.53 min : 0.40 max : 0.65
5 demo board layout figure 5. demo board layout diagram C recommended pcb material is 10 mils rogers ro4350. C suggested component values may vary according to layout and pcb material. demo board schematic table 1. component list for 1.85ghz matching. part size value part number c1, c2 0402 1000pf (murata) grm155r71h102ka01 c3, c4 0402 1000pf (murata) grm155r71h102ka01 ca7, ca11 0805 4.7uf (murata) grm21br60j475ka11l cb7, cb11 0805 4.7uf (murata) grm21br60j475ka11l ca5, ca9 0402 9pf (murata) gjm1555c1h9r0cb01 cb5, cb9 0402 9pf (murata) gjm1555c1h9r0cb01 ra1, rb1 0402 4.3 (rohm) mcr01mzsj4r3 ra4, rb4 0402 9.1 (rohm) mcro1mzsj9r1 l1, l3 0402 9nh (coilcraft) 0402cs-9n0xjlu l2, l4 0402 8.2nh (toko) llp1005-fh8n2c figure 6. demo board schematic diagram l1 l2 ca7 ca5 c1 c2 ca11 ca9 ra1 ra4 rfin a rfout a c3 rfin b l3 rb1 cb5 cb7 c4 rfout b cb9 cb11 rb4 l4 vdd1 vdd2 vgg2 vgg1 [1] [4] [3] [2] [9] [5] [12] [11] [10] [13] [8] [7] [6] [16] [15] [14]
6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 40 50 60 idd (ma) fmin (db) 0 2 4 6 8 10 12 14 16 18 20 40 50 60 idd (ma) gain (db) 0 5 10 15 20 25 30 35 40 40 50 60 idd (ma) oip3 (dbm) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 40 50 60 idd (ma) fmin (db) 0 2 4 6 8 10 12 14 16 18 40 50 60 idd (ma) gain (db) 0 5 10 15 20 25 30 35 40 40 50 60 idd (ma) oip3 (dbm) mga-17516 typical performance rf performance for each rf channel at t a = 25c, v dd = 5v, i dd = 50ma unless otherwise stated. oip3 is measured with input power of -15dbm per tone. figure 7. fmin vs idd at 5v at 1.85ghz figure 8. fmin vs idd at 5v at 2ghz figure 9. gain vs idd at 5v tuned for optimum oip3 and fmin at 1.85ghz figure 10. gain vs idd at 5v tuned for optimum oip3 and f min at 2ghz figure 11. oip3 vs idd at 5v tuned for optimum oip3 and fmin at 1.85ghz figure 12. oip3 vs idd at 5v tuned for optimum oip3 and fmin at 2ghz
7 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 20 22 24 40 50 60 i dd ( ma ) op 1 db ( dbm ) 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 20 22 24 40 50 60 i dd ( ma ) op 1 db ( dbm ) 20 30 40 50 60 70 80 90 1 00 11 .5 2 2.5 3 3.5 4 4.5 5 v dd (v) i dd ( ma ) v gg = 0.52 v gg = 0.54 v gg = 0.56 v gg = 0.58 v gg = 0.60 v gg = 0.62 v gg = 0.64 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 20 1 .7 1 .85 1 .9 2 2.4 2.5 2.6 3.5 fre q uenc y ( g hz ) gai n ( db ) - 40 c 25 c 85 c 0 0.2 0.4 0.6 0.8 1 1 .2 1 .4 1 .6 1 .7 1 .85 2 2.4 2.6 3.5 frequency ( g hz) f mi n ( db ) 0.00 0.20 0.40 0.60 0.80 1 .00 1 .20 1 .40 1 .60 1 .7 1 .85 2 2.4 2.6 3.5 frequency ( g hz) f mi n ( db ) i dd = 40ma i dd = 50ma i dd = 60ma - 40 c 25 c 85 c mga-17516 typical performance rf performance for each rf channel at t a = 25c, v dd =5v, i dd = 50ma unless otherwise stated. oip3 is measured with input power of -15dbm per tone. figure 13. op1db vs idd at 5v tuned for optimum oip3 and fmin at 1.85ghz figure 14. op1db vs idd at 5v tuned for optimum oip3 an d fmin at 2ghz figure 15. fmin vs frequency and idd at 5v figure 16. i-v curve figure 17. gain vs frequency and temperature tuned for optimum oip3 and fmin at 5v 50ma figure 18. fmin vs frequency and temperature tuned for optimum oip3 and fmin at 5v 50ma
8 mga-17516 typical performance rf performance for each rf channel at t a = 25c, v dd = 5v, i dd = 50ma unless otherwise stated. oip3 is measured with input power of -15dbm per tone. figure 19. op1db vs frequency and temperature for optimum oip3 and fmin at 5v 50ma figure 20. oip3 vs frequency and temperature for optimum oip3 and fmin at 5v 50ma below is the table showing the mga-17516 reflection coefficient parameters tuned for maximum oip3, vdd=5v, idd=50ma. frequency(ghz) gamma load position max oip3 (dbm) p1db (dbm) magnitude angle 1.70 0.402 3.5 36.6 19.7 1.85 0.104 40.1 35.1 21.6 1.90 0.512 -9.4 37.6 18.5 2.00 0.153 44.0 34.9 20.5 2.40 0.369 3.5 38.5 20.1 2.50 0.170 143.3 34.7 20.5 2.60 0.566 40.0 37.5 20.0 3.50 0.352 178.8 35.3 21.4 [1] [4] [3] [2] [9] [5] [12] [11] [10] [13] [8] [7] [6] [16] [15] [14] rfout re f ere n ce plan e rfin re f ere n ce plan e figure 21. notes: 1. the maximum oip3 values are calculated based on load pull measurements on approximately 100 different impedances using maurys load pull test system. 2. measurements are conducted on 0.010 inch thick roger 4350. the input reference plane is at the end of the rfin pin and the output reference plane is at the end of the rfout pin as shown in figure 21. 3. gamma load for maximum oip3 with biasing 3v50ma, 3.5v 50ma, 4v 50ma, 4.5v 50ma, 5v 40ma, 5v 50ma and 5v 60ma from 500 mhz to 3.5 ghz are available upon request. 0 2 4 6 8 10 12 14 16 18 20 22 24 1.7 1.85 1.9 2 2.4 2.5 2.6 3.5 f req u e n cy (ghz) op1db (dbm) 0 5 10 15 20 25 30 35 40 45 1.7 1.85 1.9 2 2.4 2.5 2.6 3.5 f req u e n cy (ghz) oip3 (dbm) -40 c 25 c 85 c -40 c 25 c 85 c
9 mga-17516 typical performance rf performance at t a = 25c, v dd = 5v, i dd = 50ma, given for each rf channel, measured on demo board in figure 5 with component list in table1 for 1.85ghz matching. oip3 is measured with input power of -15dbm per tone. figure 22. gain vs frequency and channel figure 23. reverse isolation vs frequency and channel figure 24. input return loss vs frequency and channel f igure 25. output return loss vs frequency and channel figure 26. op1db vs frequency and channel figure 27. iip3 vs frequency and channel 0 2 4 6 8 10 12 14 16 18 20 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 f req u e n cy (ghz) gain (db) 0 4 8 12 16 20 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 f req u e n cy (ghz) r e v er s e isolation (db) 0 2 4 6 8 10 12 14 16 18 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 f req u e n cy (ghz) output r e tu r n loss (db) 0 4 8 12 16 20 24 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 f req u e n cy (ghz) iip3 (dbm) 0 1 2 3 4 5 6 7 8 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 f req u e n cy (ghz) input r e tu r n loss (db) 0 4 8 12 16 20 24 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 f req u e n cy (ghz) op1db (dbm) chann e l a chann e l b chann e l a chann e l b chann e l a chann e l b chann e l a chann e l b chann e l a chann e l b chann e l a chann e l b
10 mga-17516 typical performance rf performance at t a = 25c, v dd = 5v, i dd = 50ma, given for each rf channel, measured on demo board in figure 5 with component list in table1 for 1.85ghz matching. oip3 is measured with input power of -15dbm per tone. figure 28. input return loss, output return loss, gain, reverse isolation vs frequency for channel a figure 29. input return loss, output return loss, gain, reverse isolation vs frequency for channel b figure 30. k-factor vs frequency and channel figure 31. nf vs frequency and channel 0 1 2 3 4 5 02468 1 0 1 2 1 4 1 6 1 820 f requency (g h z) k-f ac t or 0 0. 1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1 .60 1 .70 1 .80 1 .90 2.00 2. 1 0 2.20 2.30 2.40 2.50 2.60 2.70 f requency (g h z) nf (db) channe l a channe l b channe l a channe l b 0 5 1 0 1 5 20 25 30 0 1 23456 f requency (g h z) i rl , orl , gain and r e v is ol (db) 0 5 1 0 1 5 20 25 30 0.0 0.5 1 .0 1 .5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 f requency (g h z) i rl , orl , gain and r e v is ol (db) i rl orl gain r e v is ol i rl orl gain r e v is ol
11 mga-17516 typical scattering parameters, vdd = 5v, idd = 50ma freq ghz s11 s21 s12 s22 mag. ang. db mag. ang. mag. ang. mag. ang. 0.1 0.98 -13.0 27.46 23.61 165.1 0.005 86.7 0.39 -25.4 0.5 0.80 -61.6 25.03 17.84 130.3 0.024 58.9 0.26 -57.7 0.9 0.66 -94.7 22.46 13.28 106.8 0.034 47.8 0.19 -87.4 1.0 0.64 -99.7 21.88 12.41 102.5 0.036 45.5 0.18 -90.8 1.5 0.548 -127.9 19.20 9.12 82.6 0.045 38.2 0.13 -125.0 1.9 0.52 -145.4 17.41 7.42 69.6 0.052 33.5 0.12 -155.1 2.0 0.51 -149.2 17.01 7.08 66.6 0.054 31.6 0.12 -162.2 2.5 0.49 -166.2 15.16 5.73 52.7 0.062 25.3 0.14 166.1 3.0 0.48 179.6 13.51 4.74 39.7 0.070 18.6 0.17 144.0 4.0 0.48 157.6 10.90 3.51 16.4 0.085 5.3 0.24 115.5 5.0 0.48 138.2 8.78 2.75 -6.4 0.099 -10.4 0.30 87.1 6.0 0.47 119.7 6.85 2.20 -26.9 0.111 -24.9 0.40 71.2 7.0 0.46 93.9 5.05 1.79 -49.2 0.119 -42.0 0.51 50.6 8.0 0.49 71.3 3.14 1.44 -70.0 0.122 -58.5 0.62 33.4 9.0 0.53 58.2 1.36 1.17 -87.5 0.123 -72.2 0.66 19.2 10.0 0.55 52.8 -0.10 0.99 -102.4 0.127 -84.0 0.69 6.6 11.0 0.56 47.2 -1.41 0.85 -116.8 0.129 -95.3 0.71 -5.9 12.0 0.54 35.1 -2.64 0.74 -131.9 0.131 -107.7 0.76 -15.2 13.0 0.55 18.1 -4.09 0.63 -146.8 0.127 -120.3 0.81 -21.5 14.0 0.59 4.6 -5.34 0.54 -160.4 0.126 -132.0 0.83 -26.4 15.0 0.63 3.3 -6.26 0.49 -172.8 0.127 -142.7 0.82 -36.3 16.0 0.65 7.5 -6.83 0.46 174.6 0.133 -153.4 0.80 -51.0 17.0 0.63 11.0 -7.35 0.43 162.7 0.139 -164.2 0.80 -64.3 18.0 0.62 4.9 -7.88 0.40 151.5 0.145 -174.1 0.82 -66.9 19.0 0.61 -7.4 -8.37 0.38 139.9 0.150 174.7 0.83 -65.0 20.0 0.65 -20.8 -9.02 0.35 126.5 0.150 162.4 0.81 -66.9 figure 32. [1] [4] [3] [2] [9] [5] [12] [11] [10] [13] [8] [7] [6] [16] [15] [14] rfout re f ere n ce plan e rfin re f ere n ce plan e
12 part number ordering information part number no. of devices container MGA-17516-BLKG 100 antistatic bag mga-17516-tr1g 3000 tape/reel typical noise parameters, vdd = 5v, idd = 50ma freq ghz fmin opt opt r n/50 db mag. ang. 0.5 0.32 0.56 -18.64 0.069 0.7 0.32 0.48 -0.51 0.064 0.9 0.32 0.35 7.71 0.064 1.7 0.39 0.31 24.36 0.066 1.85 0.41 0.29 61.77 0.050 2.0 0.45 0.19 68.44 0.049 2.4 0.52 0.19 95.09 0.047 2.6 0.57 0.23 113.84 0.047 3.5 0.78 0.28 153089 0.037 notes: 1. the fmin values are based on noise figure measurements at 100 different impedances using focus source pull test system. from these measurements a true fmin is calculated. 2. scattering and noise parameters are measured on 10 mils thick roger 4350 with total board thickness of 62 mils. the input reference plane is at the end of the rfin pin and the output reference plane is at the end of the rfout pin as shown in figure 32. 3. s2p file with scattering and noise parameters for biasing 3v 50ma, 3.5v 50ma, 4v 50ma, 4.5v 50ma, 5v 40ma and 5v 60ma are available upon request. notes: 1. all dimensions are in millimeters. 2. dimensions are inclusive of plating. 3. dimensions are exclusive of mold ash and metal burr. slp4x4 package dimension t o p vi e w s id e vi e w bo tt o m vi e w 4.00 0. 1 0 4.00 0. 1 0 p i n 1 d o t b y m a rk i n g 0.203 r e f . 0.00 - 0.05 0.85 0. 1 0 2.70 0.05 e x p . d a p p i n #1 id en tifi ca ti o n c h a mf e r 0.30 x 45 o 1 .95 r e f . 0.30 0.05 0.65 b s c 17516 yyww xxxx 2.70 0.05 e x p . d a p 0.40 0.05
13 pcb land pattern and stencil design notes: 1. all dimensions are in millimeters. 2. 4 mil stencil thickness recommended l a n d p a ttern s tenc i l o p en i n g co mb i n a t io n o f l a n d p a ttern & s tenc i l o p en i n g 0.65 2.70 4.00 0.40 0.30 2.70 4.00 0.65 0.36 0.27 2. 1 6 3.96 2. 1 6 3.96 2. 1 6 2.70 2. 1 6 2.70 4.00 3.96 0.27 0.30 0.40 0.36 0.65
14 device orientation tape dimensions 1 2.00 + 0.30 /- 0. 1 0 8.0 0. 1 0 4.0 0. 1 0 2.00 0.05 5.50 .05 1 .75 0. 1 0 ? 1 .50 + . 1 0 .279 0.02 4.25 0. 1 0 4.25 0. 1 0 1 0o ma x . 1 0o ma x . 1 . 1 3 0. 1 0 ao k obo + + + + ? 1 .50 + 0.25 use r fee d d i r e c ti o n t o p v ie w en d v ie w use r fee d d i r e c ti o n cov e r t ap e carr ie r t ap e r ee l 1 75 1 6 yy ww xxxx 1 75 1 6 yy ww xxxx 1 75 1 6 yy ww xxxx
15 reel dimension - 7 inch a f b ? d ? e side view arbor hole g back view front view c1 tape slot plane view tape width 12mm a max 18.00 b +1.5C0.0 12.4 note: surface resistivity to be <10 12 ohms/square c1 0.5 4.40 ? d 0.5 55.0 specification ? e (max) 178 f (min) 1.50 ? h (min) 20.20 ? g 0.2 13.50
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2010 avago technologies. all rights reserved. av02-1981en - august 13, 2010 reel dimension - 13 inch esd label (see below) recycle symbol detail x m embossed line x2 90.0mm length lines 147.0mm away from center point embossed m 5.0mm height front view 16.40 max. slot 5.000.50 11.90C15.40** 13.200.50* 0331.50 max. 0100.000.50 recycle symbol detail x m back view detail x ? 13.0 ? 20.2 (min.) 2.000.5 +0.5 C0.2

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